The WST2011 MOSFETs are the most advanced P-ch transistors available, featuring unrivaled cell density. They offer exceptional performance, with low RDSON and gate charge, making them ideal for small power switching and load switch applications. Furthermore, the WST2011 meets RoHS and Green Product standards and boasts full-function reliability approval.Advanced Trench technology allows for higher cell density, resulting in a Green Device with Super Low Gate Charge and excellent CdV/dt effect decline.ON FDC634P,VISHAY Si3443DDV,NXP PMDT670UPE,

Symbol	Parameter	Rating		Units
		10s	Steady State
VDS	Drain-Source Voltage	-20		V
VGS	Gate-Source Voltage	±12		V
ID@TA=25℃	Continuous Drain Current, VGS @ -4.5V1	-3.6	-3.2	A
ID@TA=70℃	Continuous Drain Current, VGS @ -4.5V1	-2.6	-2.4	A
IDM	Pulsed Drain Current2	-12		A
PD@TA=25℃	Total Power Dissipation3	1.7	1.4	W
PD@TA=70℃	Total Power Dissipation3	1.2	0.9	W
TSTG	Storage Temperature Range	-55 to 150		℃
TJ	Operating Junction Temperature Range	-55 to 150		℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=-1mA	---	-0.011	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-4.5V , ID=-2A	---	80	85	mΩ
		VGS=-2.5V , ID=-1A	---	95	115
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-0.5	-1.0	-1.5	V
△VGS(th)	VGS(th) Temperature Coefficient		---	3.95	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-16V , VGS=0V , TJ=25℃	---	---	-1	uA
		VDS=-16V , VGS=0V , TJ=55℃	---	---	-5
IGSS	Gate-Source Leakage Current	VGS=±12V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=-5V , ID=-2A	---	8.5	---	S
Qg	Total Gate Charge (-4.5V)	VDS=-15V , VGS=-4.5V , ID=-2A	---	3.3	11.3	nC
Qgs	Gate-Source Charge		---	1.1	1.7
Qgd	Gate-Drain Charge		---	1.1	2.9
Td(on)	Turn-On Delay Time	VDD=-15V , VGS=-4.5V , RG=3.3Ω, ID=-2A	---	7.2	---	ns
Tr	Rise Time		---	9.3	---
Td(off)	Turn-Off Delay Time		---	15.4	---
Tf	Fall Time		---	3.6	---
Ciss	Input Capacitance	VDS=-15V , VGS=0V , f=1MHz	---	750	---	pF
Coss	Output Capacitance		---	95	---
Crss	Reverse Transfer Capacitance		---	68	---

High frequency point-of-load synchronous small power switching is suitable for use in MB/NB/UMPC/VGA, networking DC-DC power systems, load switches, e-cigarettes, controllers, digital products, small household appliances, and consumer electronics.