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Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	-40	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ -10V1	-6.0	A
ID@TC=100℃	Continuous Drain Current, VGS @ -10V1	-4.5	A
IDM	Pulsed Drain Current2	-24	A
EAS	Single Pulse Avalanche Energy3	12	mJ
IAS	Avalanche Current	-7	A
PD@TC=25℃	Total Power Dissipation4	1.4	W
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-40	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=-1mA	---	-0.03	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-10V , ID=-3A	---	30	40	mΩ
		VGS=-4.5V , ID=-1A	---	40	58
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-0.8	-1.2	-2.2	V
△VGS(th)	VGS(th) Temperature Coefficient		---	4.56	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-28V , VGS=0V , TJ=25℃	---	---	1	uA
		VDS=-28V , VGS=0V , TJ=55℃	---	---	5
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=-5V , ID=-3A	---	15	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	3.8	---	Ω
Qg	Total Gate Charge (-4.5V)	VDS=-18V , VGS=-10V , ID=-4A	---	9.5	---	nC
Qgs	Gate-Source Charge		---	1.7	---
Qgd	Gate-Drain Charge		---	2.0	---
Td(on)	Turn-On Delay Time	VDD=-15V , VGS=-10V , RG=6Ω, ID=-1A , RL=15Ω	---	8	---	ns
Tr	Rise Time		---	10	---
Td(off)	Turn-Off Delay Time		---	18	---
Tf	Fall Time		---	8	---
Ciss	Input Capacitance	VDS=-15V , VGS=0V , f=1MHz	---	420	---	pF
Coss	Output Capacitance		---	77	---
Crss	Reverse Transfer Capacitance		---	55	---

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