WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET

Buy the WSF70P02 P-Channel MOSFET from our factory. Rated at -20V and -70A, this TO-252 package offers exceptional performance and reliability.

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  • WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET

PRODUCTS DETAILS

The WSF70P02 MOSFET is the top-performing P-channel trench device with high cell density. It offers outstanding RDSON and gate charge for most synchronous buck converter applications. The device meets the RoHS and Green Product requirements, is 100% EAS guaranteed, and has been approved for full function reliability.Advanced Trench Technology with high cell density, super low gate charge, excellent reduction in CdV/dt effect, a 100% EAS guarantee, and options for environmentally-friendly devices.AOS
Symbol Parameter Rating Units
10s Steady State
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage ±12 V
ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -70 A
ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -36 A
IDM Pulsed Drain Current2 -200 A
EAS Single Pulse Avalanche Energy3 360 mJ
IAS Avalanche Current -55.4 A
PD@TC=25℃ Total Power Dissipation4 80 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.018 --- V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V , ID=-15A --- 6.8 9.0
       
    VGS=-2.5V , ID=-10A --- 8.2 11  
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.4 -0.6 -1.2 V
           
△VGS(th) VGS(th) Temperature Coefficient   --- 2.94 --- mV/℃
IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- 1 uA
       
    VDS=-20V , VGS=0V , TJ=55℃ --- --- 5  
IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=-5V , ID=-10A --- 45 --- S
Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-10A --- 63 --- nC
Qgs Gate-Source Charge --- 9.1 ---
Qgd Gate-Drain Charge --- 13 ---
Td(on) Turn-On Delay Time VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-10A --- 16 --- ns
Tr Rise Time --- 77 ---
Td(off) Turn-Off Delay Time --- 195 ---
Tf Fall Time --- 186 ---
Ciss Input Capacitance VDS=-10V , VGS=0V , f=1MHz --- 5783 --- pF
Coss Output Capacitance --- 520 ---
Crss Reverse Transfer Capacitance --- 445 ---
High Frequency Point-of-Load Synchronous ,Buck Converter for MB/NB/UMPC/VGA ,Networking DC-DC Power System ,Load Switch,E-cigarettes, wireless charging, motors, emergency power supplies, drones, medical care, car chargers, controllers, digital products, small household appliances, consumer electronics.

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