| Symbol | Parameter | Rating | Units |
| VDSS | Drain-to-Source Voltage | 120 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | 1 Continuous Drain Current (Tc=25℃) | 75 | A |
| ID | 1 Continuous Drain Current (Tc=70℃) | 70 | A |
| IDM | Pulsed Drain Current | 320 | A |
| IAR | Single pulse avalanche current | 40 | A |
| EASa | Single pulse avalanche energy | 240 | mJ |
| PD | Power Dissipation | 125 | W |
| TJ，Tstg | Operating Junction and Storage Temperature Range | -55 to 150 | ℃ |
| TL | Maximum Temperature for Soldering | 260 | ℃ |
| RθJC | Thermal Resistance, Junction-to-Case | 1.0 | ℃/W |
| RθJA | Thermal Resistance, Junction-to-Ambient | 50 | ℃/W |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Drain to Source Leakage Current | VDS = 120V, VGS= 0V | -- | -- | 1 | µA |
| IGSS(F) | Gate to Source Forward Leakage | VGS =+20V | -- | -- | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS =-20V | -- | -- | -100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
| RDS(ON)1 | Drain-to-Source On-Resistance | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
| gFS | Forward Transconductance | VDS=5V, ID=50A | 130 | -- | S | |
| Ciss | Input Capacitance | VGS = 0V VDS = 50V f =1.0MHz | -- | 4282 | -- | pF |
| Coss | Output Capacitance | -- | 429 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 17 | -- | pF | |
| Rg | Gate resistance | -- | 2.5 | -- | Ω | |
| td(ON) | Turn-on Delay Time | ID =20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
| tr | Rise Time | -- | 11 | -- | ns | |
| td(OFF) | Turn-Off Delay Time | -- | 55 | -- | ns | |
| tf | Fall Time | -- | 28 | -- | ns | |
| Qg | Total Gate Charge | VGS =0~10V VDS = 50VID =20A | -- | 61.4 | -- | nC |
| Qgs | Gate Source Charge | -- | 17.4 | -- | nC | |
| Qgd | Gate Drain Charge | -- | 14.1 | -- | nC | |
| IS | Diode Forward Current | TC =25 °C | -- | -- | 100 | A |
| ISM | Diode Pulse Current | -- | -- | 320 | A | |
| VSD | Diode Forward Voltage | IS=6.0A, VGS=0V | -- | -- | 1.2 | V |
| trr | Reverse Recovery time | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 250 | -- | nC |
