WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET

Get high-quality WSR200N08 N-channel MOSFETs from our factory. These TO-220-3L WINSOK MOSFETs offer 80V voltage and 200A current ratings.

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  • WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET
  • WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET
  • WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET

PRODUCTS DETAILS

The WSR200N08 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSR200N08 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved.Advanced high cell density Trench technology, Super Low Gate Charge, Excellent CdV/dt effect decline,100% EAS Guaranteed, Green Device Available. AO AOT480L, ON FDP032N08B,ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, etc.
Symbol Parameter Rating Units
VDS Drain-Source Voltage 80 V
VGS Gate-Source Voltage ±25 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 200 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 144 A
IDM Pulsed Drain Current2,TC=25°C 790 A
EAS Avalanche Energy, Single pulse,L=0.5mH 1496 mJ
IAS Avalanche Current, Single pulse,L=0.5mH 200 A
PD@TC=25℃ Total Power Dissipation4 345 W
PD@TC=100℃ Total Power Dissipation4 173 W
TSTG Storage Temperature Range -55 to 175
TJ Operating Junction Temperature Range 175
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃, ID=1mA --- 0.096 --- V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V,ID=100A --- 2.9 3.5
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 3.0 4.0 V
△VGS(th) VGS(th) Temperature Coefficient --- -5.5 --- mV/℃
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA
VDS=80V , VGS=0V , TJ=55℃ --- --- 10
IGSS Gate-Source Leakage Current VGS=±25V , VDS=0V --- --- ±100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.2 --- Ω
Qg Total Gate Charge (10V) VDS=80V , VGS=10V , ID=30A --- 197 --- nC
Qgs Gate-Source Charge --- 31 ---
Qgd Gate-Drain Charge --- 75 ---
Td(on) Turn-On Delay Time VDD=50V , VGS=10V ,RG=3Ω, ID=30A --- 28 --- ns
Tr Rise Time --- 18 ---
Td(off) Turn-Off Delay Time --- 42 ---
Tf Fall Time --- 54 ---
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 8154 --- pF
Coss Output Capacitance --- 1029 ---
Crss Reverse Transfer Capacitance --- 650 ---
Switching application, Power Management for Inverter Systems, Electronic cigarettes, wireless charging, motors, BMS, emergency power supplies, drones, medical, car charging, controllers, 3D printers, digital products, small household appliances, consumer electronics, etc.

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