WSD20L120DN56 P-channel -20V -120A DFN5*6-8 WINSOK MOSFET

Shop our factory-direct WSD20L120DN56 P-channel MOSFET, delivering -20V and -120A. Discover reliable and efficient power solutions for your applications.

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  • WSD20L120DN56 P-channel -20V -120A DFN5*6-8 WINSOK MOSFET

PRODUCTS DETAILS

The WSD20L120DN56 is a top-performing P-Ch MOSFET with a high-density cell structure, giving superb RDSON and gate charge for most synchronous buck converter uses. The WSD20L120DN56 meets 100% EAS requirements for RoHS and environmentally friendly products, with full-function reliability approval.1,Advanced high cell density Trench technology 2,Super Low Gate Charge 3, Excellent CdV/dt effect decline 4, 100% EAS Guaranteed 5, Green Device AvailableAOS AON6411,NIKO PK5A7BA
Symbol Parameter Rating Units
10s Steady State
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage ±10 V
ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -120 A
ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -69.5 A
ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -25 -22 A
ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -24 -18 A
IDM Pulsed Drain Current2 -340 A
EAS Single Pulse Avalanche Energy3 300 mJ
IAS Avalanche Current -36 A
PD@TC=25℃ Total Power Dissipation4 130 W
PD@TA=25℃ Total Power Dissipation4 6.8 6.25 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.0212 --- V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V , ID=-20A --- 2.1 2.7
       
    VGS=-2.5V , ID=-20A --- 2.8 3.7  
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.4 -0.6 -1.0 V
           
△VGS(th) VGS(th) Temperature Coefficient   --- 4.8 --- mV/℃
IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 uA
       
    VDS=-20V , VGS=0V , TJ=55℃ --- --- -6  
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=-5V , ID=-20A --- 100 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 5 Ω
Qg Total Gate Charge (-4.5V) VDS=-10V , VGS=-4.5V , ID=-20A --- 100 --- nC
Qgs Gate-Source Charge --- 21 ---
Qgd Gate-Drain Charge --- 32 ---
Td(on) Turn-On Delay Time VDD=-10V , VGEN=-4.5V , RG=3Ω ID=-1A ,RL=0.5Ω --- 20 --- ns
Tr Rise Time --- 50 ---
Td(off) Turn-Off Delay Time --- 100 ---
Tf Fall Time --- 40 ---
Ciss Input Capacitance VDS=-10V , VGS=0V , f=1MHz --- 4950 --- pF
Coss Output Capacitance --- 380 ---
Crss Reverse Transfer Capacitance --- 290 ---
High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-cigarette, Wireless Charger, Motors, Drones, Medical, Car Charger, Controller, Digital Products, Small Home Appliances, Consumer Electronics.

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