The WST8205 is a high performance trench N-Ch MOSFET with extremely high cell density, providing excellent RDSON and gate charge for most small power switching and load switching applications. The WST8205 meets RoHS and Green Product requirements with full functional reliability approval.Our advanced technology incorporates innovative features that set this device apart from others in the market. With high cell density trenches, this technology enables greater integration of components, leading to enhanced performance and efficiency.One notable advantage of this device is its extremely low gate charge. As a result, it requires minimal energy to switch between its on and off states, resulting in reduced power consumption and improved overall efficiency. This low gate charge characteristic makes it an ideal choice for applications that demand high-speed switching and precise control.Additionally, our device excels in reducing Cdv/dt effects. Cdv/dt, or the rate of change of drain-to-source voltage over time, can cause undesirable effects such as voltage spikes and electromagnetic interference. By effectively minimizing these effects, our device ensures reliable and stable operation, even in demanding and dynamic environments.Apart from its technical prowess, this device is also environmentally friendly. It is designed with sustainability in mind, taking into consideration factors such as power efficiency and longevity. By operating with utmost energy efficiency, this device minimizes its carbon footprint and contributes to a greener future.In summary, our device combines advanced technology with high cell density trenches, extremely low gate charge, and excellent reduction of Cdv/dt effects. With its environmentally friendly design, it not only delivers superior performance and efficiency but also aligns with the growing need for sustainable solutions in today's world.AOS AO6804A,NXP PMDT290UNE,PANJIT PJS6816,Sinopower SM2630DSC,dintek DTS5440,DTS8205,DTS5440,DTS8205,RU8205C6.
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
ID@Tc=25℃
Continuous Drain Current, VGS @ 4.5V1
5.8
A
ID@Tc=70℃
Continuous Drain Current, VGS @ 4.5V1
3.8
A
IDM
Pulsed Drain Current2
16
A
PD@TA=25℃
Total Power Dissipation3
2.1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
△BVDSS/△TJ
BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.022
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V , ID=5.5A
---
24
28
mΩ
VGS=2.5V , ID=3.5A
---
30
45
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.5
0.7
1.2
V
△VGS(th)
VGS(th) Temperature Coefficient
---
-2.33
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=5A
---
25
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.5
3
Ω
Qg
Total Gate Charge (4.5V)
VDS=10V , VGS=4.5V , ID=5.5A
---
8.3
11.9
nC
Qgs
Gate-Source Charge
---
1.4
2.0
Qgd
Gate-Drain Charge
---
2.2
3.2
Td(on)
Turn-On Delay Time
VDD=10V , VGEN=4.5V , RG=6Ω ID=5A, RL=10Ω
---
5.7
11.6
ns
Tr
Rise Time
---
34
63
Td(off)
Turn-Off Delay Time
---
22
46
Tf
Fall Time
---
9.0
18.4
Ciss
Input Capacitance
VDS=10V , VGS=0V , f=1MHz
---
625
889
pF
Coss
Output Capacitance
---
69
98
Crss
Reverse Transfer Capacitance
---
61
88
High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System,Automotive electronics, LED lights, audio, digital products, small household appliances, consumer electronics, protective boards.
