WSD3023DN56 N-Ch and P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

Experience superior performance with WSD3023DN56 N-Ch and P-Channel 30V/-30V MOSFET. As a factory, we offer high-quality MOSFETs with a current rating of 14A/-12A. Shop now!

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  • WSD3023DN56 N-Ch and P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

PRODUCTS DETAILS

The WSD3023DN56 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD3023DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.Advanced high cell density Trench technology ,Super Low Gate Charge ,Excellent CdV/dt effect decline ,100% EAS Guaranteed ,Green Device Available.PANJIT PJQ5606
Symbol Parameter Rating Units
N-Ch P-Ch
VDS Drain-Source Voltage 30 -30 V
VGS Gate-Source Voltage ±20 ±20 V
ID Continuous Drain Current, VGS(NP)=10V,Ta=25℃ 14* -12 A
Continuous Drain Current, VGS(NP)=10V,Ta=70℃ 7.6 -9.7 A
IDP a Pulse Drain Current Tested, VGS(NP)=10V 48 -48 A
EAS c Avalanche Energy, Single pulse , L=0.5mH 20 20 mJ
IAS c Avalanche Current, Single pulse , L=0.5mH 9 -9 A
PD Total Power Dissipation, Ta=25℃ 5.25 5.25 W
TSTG Storage Temperature Range -55 to 175 -55 to 175
TJ Operating Junction Temperature Range 175 175
RqJA b Thermal Resistance-Junction to Ambient,Steady State 60 60 ℃/W
RqJC Thermal Resistance-Junction to Case,Steady State 6.25 6.25 ℃/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
RDS(ON)d Static Drain-Source On-Resistance VGS=10V , ID=8A --- 14 18.5
VGS=4.5V , ID=5A --- 17 25
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.3 1.8 2.3 V
IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25℃ --- --- 1 uA
VDS=20V , VGS=0V , TJ=85℃ --- --- 30
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.4 Ω
Qge Total Gate Charge VDS=15V, VGS=4.5V, IDS=8A --- 5.2 --- nC
Qgse Gate-Source Charge --- 1.0 ---
Qgde Gate-Drain Charge --- 2.8 ---
Td(on)e Turn-On Delay Time VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R. --- 6 --- ns
Tre Rise Time --- 8.6 ---
Td(off)e Turn-Off Delay Time --- 16 ---
Tfe Fall Time --- 3.6 ---
Cisse Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 545 --- pF
Cosse Output Capacitance --- 95 ---
Crsse Reverse Transfer Capacitance --- 55 ---
High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA,Networking DC-DC Power System ,CCFL Back-light Inverter,Drones, motors, automotive electronics, major appliances.

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